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| AO3406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3406 is Pb-free (meets ROHS & Sony 259 specifications). AO3406L is a Green Product ordering option. AO3406 and AO3406L are electrically identical. Features VDS (V) = 30V ID = 3.6A (VGS = 10V) RDS(ON) < 65m (VGS = 10V) RDS(ON) < 105m (VGS = 4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 20 3.6 2.9 15 1.4 0.9 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3406 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2.8A Forward Transconductance VDS=5V, ID=3.6A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 15 50 74 75 7 0.79 1 2.5 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 57 39 3 6.5 VGS=10V, VDS=15V, ID=3.6A 3.1 1.2 1.6 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=3.6A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 1.9 3 65 100 105 A nA V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 375 6 8.5 4 nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 1.9 20.1 2.6 10.2 3.5 14 Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 6V 9 ID (A) 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 100 90 RDS(ON) (m) 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 ID=3.6A 150 1.0E-01 RDS(ON) (m) IS (A) 100 125C 1.0E-02 25 1.0E-03 50 25C 1.0E-04 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E+01 1.0E+00 VGS=4.5V Normalized On-Resistance 1.8 ID=3.6A 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V 3.5V ID(A) 4V 6 4 125C VGS=3V 2 0 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 25C 10 10V 4.5V 8 VDS=5V VGS=10V 125 Alpha and Omega Semiconductor, Ltd. AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 400 VDS=15V ID=3.6A Capacitance (pF) 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 10.0 ID (Amps) RDS(ON) limited 10s Power (W) 20 TJ(Max)=150C TA=25C 15 100s 1ms 0.1s 10ms 10 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. |
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